Acoustic signal level limiter for hearing safety

ABSTRACT

An acoustic signal level limiter provides a telephone handset/headset user with protection against loud audible signals generated within a communications system. The acoustic signal limiter comprises an acoustic signal level attenuation circuit and at least one acoustic signal level relay circuit. Once activated, the acoustic signal level attenuation circuit creates an attenuation network that attenuates an electrical acoustic signal transmitted through the communications system. Additional acoustic signal level relay circuits are activated to further attenuate the electrical acoustical signal to prevent the acoustic signal level attenuation circuit from operating in a deep saturation mode and provide further hearing safety for the telephone headset/handset user. A fuse in series and “Zener Zap” shunting transistor diodes may provide additional failsafe protection.

RELATED APPLICATIONS

This is a divisional of U.S. patent application Ser. No. 09/967,677, filed Sep. 28, 2001, now U.S. Pat. No. 7,200,238, issued Apr. 3, 2007, the entire disclosure of which is incorporated herein by reference.

BACKGROUND

This disclosure relates generally to acoustic signal level detection and control, and more particularly, to hearing safety protection in communication devices that limit the level of an acoustic signal that is transmitted to a listener through a communication device.

Proper control of electrical acoustic signal levels within a communication system is desirable to ensure high quality communication and hearing safety to individuals using the system. Generally, a telephone handset or headset includes a microphone and a speaker. For example, a telephone headset provides a microphone on an arm that is positioned proximate to a user's mouth and a speaker disposed within an earpiece that is positioned over the user's ear. In order to provide proper communication, the sound level of the audible signal emitted from the speaker should fall within a range of sound intensity. If the sound level is below this intensity range, then the user may not be able to hear or understand what is being said by the remote talker. Conversely, if the sound level is above this intensity range, then the user may be subjected to increasingly uncomfortable sound levels finally reaching the point of injury. Loud audible signals are of concern in communication devices, such as telephone handsets and headsets, that position a speaker near a user's ear.

These loud audible signals may be caused by a variety of different events. For example, accidental disturbances within a communication connection may cause an electrical signal level to increase dramatically (e.g., a malfunctioning amplifier, intense feedback, incorrect signal source, or phone line shorted to power line). Oftentimes, the transient time of a signal to reach a high level may be very short and a listener may have little or no time to remove an earpiece or other listening device from her ear before she is exposed to that high level. In the case of a telephone headset user, the listener may have to bring her hand to her ear, which may require a second or two before the earpiece is removed. Also, many headset users spend a large amount of time on the phone. For example, headset users, such as telemarketers, receptionists, and operators often spend eight hours a day answering telephone calls and speaking with people over a telephone. Consequently, these individuals are at a higher risk of sound exposure caused by a sudden or constant loud audible signal. Thus, due to the extended time headset users are on telephone calls and the extra time required to remove the headset, headset users are particularly vulnerable to exposure to loud audible signals generated from the headset speaker.

FIG. 1 depicts a varistor 100 that has been used to reduce the maximum level to the speaker, and hence, the sound exposure. Basically, a varistor 100 is a surge protector that senses peaks within a signal and, in response, creates a shunt path, using diodes, that attenuates these peaks. As shown in FIG. 1, a voltage source 105, with corresponding source impedance 110, provides an electrical signal to an attached load 125 via the varistor 100. Examples of this voltage source 105 include a telephone or telephone adapter, and examples of the load include a telephone handset or headset speaker. The varistor 100 has a first diode 115 connected in parallel to a second diode 120, each having a corresponding turn-on voltage. This turn-on voltage activates the diode, and typically, is between 0.5-0.7 volts. The diodes 115, 120 are used to shunt the positive and negative halves of an electrical signal through their corresponding paths after the electrical signal received from the voltage source 105 reaches the respective diode turn-on voltages.

The first diode 115 is used to shunt the negative half of the electrical signal current and is activated by a magnitude of the negative half exceeding the first diode's turn-on voltage. If this magnitude is below the turn-on voltage, then the first diode 115 remains cut off. However, if the magnitude is above the turn-on voltage, then the first diode 115 is on and conducts current from the voltage source 105, thereby creating a shunt path. The amount of current actually conducted through the shunt path depends on the impedance of the load 125. In any event, the level of the negative half of the electrical signal current received by the load 125 is reduced because of this activated negative shunt path.

The second diode 120 operates in a similar manner as the first diode 115, except that it creates a shunt path for the positive half of the electrical signal received from the voltage source 105. As a result, the magnitude of each half of the electrical signal is attenuated after the diodes 115 and 120 are turned on. However, as is apparent, the voltage across the load 125 is not totally clamped if the electrical signal power increases. Rather, voltage across the load 125 may continue to increase, although at a much lesser rate due to the clamping effects of the positive and negative shunt paths. The voltage increase across the load 125 is caused by the fact that the resistance levels of the diodes 115, 120 are finally fixed. The level of shunting provided by the diodes 115, 120 is dependent on the ratio of the diode resistance and the load resistance, both of which are finally fixed, resulting in the diodes being incapable of adjusting the level of shunting provided by the diode paths. Thus, the voltage across the load 125 may continue to rise and produce a very loud audible signal if the level of the electrical signal is sufficiently high.

The problems above are caused primarily by the non-linear effects of the two diodes 115, 120. Specifically, the relationship between the current through a diode and the voltage across the diode is nonlinear. As the voltage source reaches the turn on voltage of the two diodes 115, 120, the diodes 115, 120 are activated and shunt current from the load 125. Additionally, the nonlinear characteristics of the activated diodes 115, 120 cause higher distortion across the load 125. Thus, the quality of any audible signal generated by the load 125 is compromised as turn on voltage is approached.

FIG. 2 depicts another circuit that has been used to reduce the electrical signal peaks. As shown in FIG. 2, a discrete transistor circuit 200 is coupled in parallel to the first and second diodes 115, 120. The discrete transistor circuit 200 comprises a first transistor 220, a second transistor 225, a first resistor 215 and a second resistor 230. The first transistor 220 base and emitter are connected across voltage source 105. The second transistor 225 is coupled in parallel to the voltage source 105 in a similar manner. This discrete transistor circuit 200 is placed in front of the two diodes 115, 120 and is activated by an electrical signal voltage level from the voltage source 105 being above the turn-on voltage of the first and second transistors 220, 225.

The first transistor 220 attenuates the positive half of an electrical signal after the voltage level between the first transistor 220 emitter and base exceeds the first transistor's turn-on voltage. Typically, this transistor turn-on voltage is between 0.5-0.7 volts. Once this first transistor 220 is turned on, an attenuation network is created, comprising the first resistor 220 and the resistance (Rce₁) between the emitter and the collector of the first transistor 220. This attenuation network functions to decrease the positive voltage at the load 125 by allowing current to flow through the first transistor 220. As the voltage level of the electrical signal increases, the transistor 220 goes into saturation mode, and the resistance (Rce₁) between the emitter and collector of the first transistor 220 decreases. As a result, because this resistance (Rce₁) forms a divider network with the first resistor 215, the current flowing through the first transistor 220 increases, thereby limiting the relative voltage across the load 125. As the voltage source increases, the saturation level within the first transistor 215 deepens. Hence, the voltage across the load 125 decreases.

The second transistor 225 operates in a similar manner as the first transistor 220, except that it operates on the negative half of the electrical signal from the voltage source 105. Specifically, after the second transistor 225 is turned on, an attenuation network is created comprising the second resistor 230 and the resistance (Rce₂) between the collector and emitter of the second transistor 225. Thus, the negative half of the electrical signal is attenuated, resulting in limiting the relative voltage across the load 125 as the voltage level on the electrical signal from the voltage source 105 increases.

Although the use of the two transistors 220, 225 provides better attenuation characteristics than the varistor 100 shown in FIG. 1, the two transistors 220, 225 are not capable of sufficiently attenuating a very large signal. This failure results from the saturation characteristics of the two transistors 220, 225. Specifically, if the voltage on the electrical signal increases to a sufficiently high level to drive the transistors 220, 225 into a deep saturation mode, the resistance (Rce₂) between the emitter and collector of the transistors 220, 225 becomes fixed. As a result, the two transistors 220, 225 function similar to diodes that operate within the varistor 100 and a resistor network is created. Thus, as the voltage level on an electrical signal increases sufficiently to drive the transistors 220, 225 into deep saturation, the voltage across the load 125 increases.

The first diode 115 and the second diode 120 are still required to provide the Zener short circuit to prevent the output from increasing. In order to compensate for the above-described problem, a varistor 100 may be placed behind the discrete transistor circuit 200. However, the above-described problems regarding varistors are then reintroduced. The resistor network resulting from the diodes 115, 120 is thus not able to clamp the voltage across the load 125, but rather, only to decrease the slope of any voltage increase of the load 125.

FIG. 3 graphically depicts the inability of the above-described prior devices to effectively limit the maximum voltage level across the load 125. As shown in FIG. 3, an electrical output voltage signal 305 operating below a turn-on voltage 320 is relatively unaffected by the discrete transistor circuit 200. However, after the turn-on voltage is reached, the rate at which the electrical output voltage signal 310 increases is reduced. If only the varistor 100 is used, then the voltage across the load 125 will continue to rise 325 as the voltage source 105 increases. If both the discrete transistor circuit 200 and the varistor 100 are used, then the voltage across the load 125 will initially decline 330. However, once the voltage source 105 is sufficiently high to drive the transistors 220, 225 into deep saturation, then the voltage across the load 125 will start to rise 335. Due to the fixed resistance of the deep saturation characteristics of the transistors 220, 225, the voltage across the load 125 is not absolutely clamped, but instead, increases slowly in relation to an increase in the source voltage 105. It is important to note that the output voltage 310 may still rise above a desired clamping level 315.

Accordingly, there is a need for methods and apparatus that limit an output voltage as the voltage source increases. Additionally, because the apparatus may be required to operate in small devices with a limited power, such as in communication headsets, there is an additional need that the apparatus minimize cost, power consumption, and distortion.

BRIEF SUMMARY

The present invention overcomes the deficiencies and limitations of the prior art by providing a hearing safety system and method that limit an acoustic signal level to a predetermined threshold. In one embodiment, an acoustic signal level limiter circuit is coupled between a voltage source and a load. In the field of telecommunications, for example, the voltage source may be a telephone or telephone adapter, and the load may be a telephone handset or headset. The acoustic signal level limiter circuit limits electrical signal levels from the voltage source by implementing multiple attenuation networks that are sequentially activated as the electrical signal crosses predetermined voltage levels. If the electrical signal level is sufficiently high to activate at least one of these attenuation networks, then the electrical signal is attenuated accordingly. As a result of this signal attenuation, the acoustic signal level limiter circuit is able to maintain a maximum signal level threshold above which the electrical signal is prevented from crossing. Ultimately, when the signal level is high enough to exhaust the attenuation capability of the limiter, a combination series fuse and/or shunt short is operative to disconnect all output to the load. The maximum signal level threshold of the apparatus thus protects a user of a communication device (e.g., a telephone headset) from signals that could produce undesirable audio levels.

In one exemplary embodiment, the acoustic signal level limiter comprises an acoustic signal level attenuation circuit and at least one acoustic signal level relay circuit. The acoustic signal level limiter may be designed to handle various levels of signal overload by adjusting the number of acoustic signal level relay circuits. As the number of acoustic signal level relay circuits integrated within the acoustic signal level limiter increases, the ability of the acoustic signal level limiter to protect against extremely high electrical signal levels within the communication system is enhanced. Thus, the acoustic signal level limiter can be flexibly designed by increasing or decreasing the number of relays to handle different levels of signal overload. Finally, the series fuse and/or shunt short mechanism will disconnect output signals to the speaker load.

The exemplary acoustic signal level attenuation circuit comprises a discrete transistor circuit that operates to detect high electrical signal levels, and in response thereto, to attenuate the signal level to a proper level. However, if the electrical signal level is too high, the transistors within the acoustic signal level attenuation circuit will operate in a deep saturation mode. Deeply saturated transistors are not able to effectively attenuate the electrical signal, resulting in the attenuation network functioning in a manner similar to a resistor network. Specifically, the effective resistance of transistors in deep saturation is constant, resulting in a fixed resistor network that cannot adjust the amount of attenuation of the electrical signal. As a result, the voltage across the load will increase, although at a lesser rate, as the electrical signal level from the voltage source increases.

To overcome this problem, an acoustic signal level relay circuit is integrated within the exemplary acoustic signal level limiter to enhance the operation of the acoustic signal level attenuation circuit. The acoustic signal level relay circuit inhibits the acoustic signal level attenuation circuit from entering a deep saturation mode. Specifically, once activated, the acoustic signal level relay circuit further attenuates the electrical signal from the voltage source so as to prevent the electrical signal from deeply saturating the transistors within acoustic signal level attenuation circuit and to further reduce the voltage level across the load. However, like the transistors in the acoustic signal level attenuation circuit, the transistors in the acoustic signal level relay circuit may also be deeply saturated if the electrical signal level is sufficiently high. The integration of the acoustic signal level relay circuit increases the required level at the voltage source necessary to saturate the acoustic signal level attenuation circuit because it further attenuates the electrical signal from the voltage source.

Additional acoustic signal level relay circuits may be integrated within the acoustic signal level limiter to further increase the required level at the voltage source to saturate the acoustic signal level attenuation circuit. As a result, a manufacturer may design the acoustic signal level limiter according to the environment in which it operates and the particular needs of the user. For example, a telephone communications headset may require only a certain number of acoustic signal level relay circuits to protect against large signals propagating through a telephone line. At signal levels well beyond what is to be expected in an application, the series fuse/shunt short mechanism of the invention provides the ultimate failsafe, disabling the headset speaker drive. In addition to establishing a maximum electrical signal level threshold, the acoustic signal level limiter offers other performance advantages over current devices that are being implemented.

The acoustic signal level limiter takes advantage of specific characteristics of transistors within the acoustic signal level attenuation circuit and the acoustic signal level relay circuit(s) to provide enhanced signal level clamping effects. For example, the transistor network introduces less distortion than the varistor on the electrical signal as the electrical signal voltage level approaches the turn-on voltage. Also, the transistor circuits, rather than providing a simple flat-topped clipping of the diodes, generate a concave-topped waveform containing less energy.

The characteristics of the transistors may be modified by using various types of transistors (e.g., bipolar junction transistors (BJTs) or field effect transistors (FETs)). For instance, junction field effect transistors (JFETs) may be implemented to designate different pinch-off voltages, and correspondingly, manipulate the maximum signal level threshold allowed across the load. Additionally, the acoustic signal level limiter may be fabricated to provide a Zener diode effect on specific transistors. This Zener diode effect or “Zener Zap” is an integrated bipolar technology effect that provides a fuse that will trigger if a particular current level is reached within the circuit. Thus, a “Zener Zap” or other fuse device may be provided to isolate the load from the voltage source in the event the electrical signal level is too high for the acoustic signal level limiter to effectively attenuate the electrical signal.

The features and advantages described in this summary and the following detailed description are not all-inclusive, and particularly, many additional features and advantages will be apparent to one of ordinary skill in the art in view of the drawings, specification, and claims hereof.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a circuit diagram of a varistor operable within various communication devices.

FIG. 2 is a circuit diagram of a discrete transistor/varistor circuit operable within various communication devices.

FIG. 3 is a graphical diagram of the output voltage response of the varistor, and discrete transistor/varistor circuit.

FIG. 4 is a general block diagram of an acoustic signal level limiter apparatus.

FIG. 5 is a graphical diagram of the output voltage response of the acoustic signal level limiter apparatus.

FIG. 6 is a circuit diagram of a first embodiment of the acoustic signal level limiter apparatus.

FIG. 7 is a circuit diagram of a second embodiment of the acoustic signal level limiter apparatus.

FIG. 8 is a circuit diagram of a third embodiment of the acoustic signal level limiter apparatus.

The figures depict a preferred embodiment of the present invention for purposes of illustration only. One skilled in the art will readily recognize from the following discussion that alternative embodiments of the structures and methods illustrated herein may be employed without departing from the principles of the invention described herein.

DETAILED DESCRIPTION

In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the invention. It will be apparent, however, to one skilled in the art that the invention can be practiced without these specific details. In other instances, structure and devices are shown in block diagram form in order to avoid obscuring the invention. Moreover, it should be noted that the language used in this disclosure has been principally selected for readability and instructional purposes, and may not have been selected to delineate or circumscribe the inventive subject matter, resort to the claims being necessary to determine such inventive subject matter.

A. System Overview

The present invention limits the level of an incoming electrical acoustic signal to a particular maximum threshold. FIG. 4 is a general block diagram showing an exemplary embodiment of the present invention. As shown, this embodiment operates between a voltage source 105 and a load 125. Although the present invention may operate in a number of different environments, the following description will focus on telephone communication applications. However, it should be understood that the present invention is not be limited to that environment, rather, it may be applied in any environment wherein control of electrical signals is necessary. Additionally, the present invention will be described in terms of hardware components (e.g., transistors, diodes and resistors), but should not be limited to this description. Specifically, the present invention may be implemented using a number of different types of technology, including hardware, software and firmware (e.g., digital signal processing implementations).

The voltage source 105 transmits an electrical signal that is eventually delivered to an electrical load 125. Examples of this voltage source 105 include telephones and telephone adapters. Examples of the electrical load 125 include telephone headset and handset speakers. The voltage source 105 is coupled to an acoustic signal level attenuation circuit 410. The acoustic signal level attenuation circuit 410 is coupled to one or more acoustic signal level relay circuits. For example, the acoustic signal level attenuation circuit 410 may be coupled in parallel to a first acoustic signal relay circuit 415. The first acoustic signal relay circuit 415 may be coupled in parallel to a second acoustic signal level relay circuit 420, and so on. These parallel connections of acoustic signal level relay circuits may continue depending on the requirements of the voltage source 105 and the load 125. Finally, the load 125 is coupled in parallel to the Nth acoustic signal level relay circuit 430. It is important to note that there may be only the first acoustic signal level attenuation circuits 415 placed behind the acoustic signal level attenuation circuit 410.

The acoustic signal level attenuation circuit 410 initially detects peaks within an electrical signal from the voltage source 105. In response to a peak of a level above a first threshold, the acoustic signal level attenuation circuit 410 functions to reduce the level of the electrical signal. This signal level reduction reduces the rate at which the signal level increases at the load 125 in relation to a signal level at the voltage source 105. Thus, although the acoustic signal level attenuation circuit 410 may reduce the intensity of the acoustic signal from the load 125, the acoustic signal intensity may still cross an undesirable threshold if the voltage source 105 transmits a sufficiently strong electrical signal. Accordingly, one or more acoustic signal level relay circuits are used to further attenuate the electrical signal transmitted from the voltage source 105 in order to further reduce the rate at which the voltage across the load 125 increases relative to the voltage source 105.

The first acoustic signal level relay circuit 415 is activated in response to peaks within the electrical signal crossing a second threshold. Upon activation, the first acoustic signal level relay circuit 415 attenuates the electrical signal; thereby further reducing the rate at which voltage across the load 125 increases relative to the voltage source 105. Upon activation, the first acoustic signal level relay circuit 415 opens an attenuation network that adjusts the level of attenuation dependent on the level on the electrical signal. (In contrast, a varistor acts as a resistor network that is unable to adjust attenuation levels because the resistance levels of the diodes within the resistor network are fixed.) However, if the electrical signal level becomes too high, the attenuation network in the first acoustic signal level relay circuit 415 will deeply saturate. As a result of this deep saturation, the attenuation network then operates as a resistor network, thereby allowing the voltage across the load 125 to increase (although at a relatively lesser rate).

In the embodiment illustrated in FIG. 4, a second acoustic signal level relay circuit 420 is coupled in parallel to the acoustic signal level attenuation circuit 410 and the first acoustic signal level relay circuit 415 to compensate for electrical signals driving the attenuation network in the first acoustic signal level relay 415 into deep saturation. The second acoustic signal level relay circuit 420 provides a second attenuation network that is activated when the electrical signal crosses a third threshold. This third threshold is below the level required to drive the first attenuation network into deep saturation. Once activated, this second attenuation network further attenuates the electrical signal. As a result, the activation of the second acoustic signal level relay circuit 420 further increases the rate at which the electrical signal is attenuated. Thus, the voltage across the load 125 is further reduced in relation to the voltage source 105.

The voltage across the load 125 may be further suppressed by coupling more acoustic signal level relay circuits. A maximum electrical signal level threshold may be created by the addition of these acoustic signal level relay circuits. Thus, as shown in FIG. 4, these acoustic signal level relay circuits may be coupled in parallel to each other up to the Nth acoustic signal level relay circuit 430. Finally, the load 125 is coupled to the array of acoustic signal level relay circuits (if multiple attenuation circuits are used). The acoustic signal level relay circuits may be activated sequentially or virtually instantaneously.

FIG. 5 shows this maximum electrical signal level at the load 125 by plotting the output voltage (voltage across the load 125) versus the input voltage (voltage source 105). Prior to activating the acoustic signal level attenuation circuit 410, the output voltage 505 increases approximately at the same rate the input voltage increases. In response to the electrical signal reaching the activation level 520 of the acoustic signal level attenuation circuit 410, the attenuation network within the acoustic signal level attenuation circuit 410 is activated and the electrical signal is attenuated accordingly. This effect is shown in FIG. 5 by the dramatic reduction in the slope of the curve at the activation voltage level 520. As the input voltage increases beyond the activation level 520, other acoustic signal level relay circuits are activated. Thus, as the number of activated acoustic signal level relay circuits increases, the relative attenuation on the electrical signal will increase and cause the load voltage to continually decrease 530.

FIG. 5 shows that this maximum electrical signal level at the load 125 occurs as a result of these activated acoustic signal level relay circuits. In fact, as the number of activated attenuation circuits increases, it has been shown that the voltage level across the load 125 decreases due to the total effects of the attenuation circuits, and that a higher voltage source 105 is required to deeply saturate the transistors causing the load voltage to rise 525. In order to prevent deeply saturating the transistors and the resulting increase in load voltage at this high voltage source 105 level, additional acoustic signal level relay circuits may be added to ensure that the load voltage does not increase at this high voltage source 105 level. As a result, the level of the emitted audible signal from the load 125 never exceeds the desired limits.

The following sections explain each of the above-described circuits in more detail.

B. Acoustic Signal Level Attenuation Circuit

FIG. 6 is a circuit diagram of an exemplary embodiment of an acoustic signal level limiter circuit 600 in accordance with the present invention. The acoustic signal level limiter circuit 600 is coupled between a load 125 and a voltage source 105. As above, this embodiment is described as operating in a telephone communication environment. However, the present invention is not limited to this particular environment, but rather, may function in numerous other situations where control of electrical signal levels is necessary. Thus, within this environment, the load 125 may be a telephone headset or handset. The voltage source 105, with a corresponding source impedance 110, may be a telephone or telephone adapter.

The voltage source 105 is coupled in parallel to a first acoustic signal level relay circuit 670 and an acoustic signal level attenuation circuit 680. The acoustic signal level attenuation circuit 680 is activated by an electrical signal peak from the voltage source 105 crossing a first threshold. The first acoustic signal level relay circuit 670 is activated by an electrical signal peak from the voltage source 105 crossing a second threshold that is higher than the first threshold.

The acoustic signal level attenuation circuit 680 comprises a first transistor 630, a second transistor 635, a first resistor 625 and a second resistor 650. The base of the first transistor 630 is coupled to the positive side of voltage source 105, and its emitter is coupled to the negative side of the voltage source 105. The second transistor 635 is coupled in parallel to the voltage source 105, with its base coupled to the negative side of the voltage source 105 and its emitter coupled to the positive side of the voltage source 105. The acoustic signal level attenuation circuit 680 is activated by the electrical signal from the voltage source 105 being sufficiently high to turn on the first transistor 630 and the second transistor 635. Typically, this level is between 0.5-0.7 volts. Once activated, the acoustic signal level attenuation circuit 680 attenuates the electrical signal in the following manner.

The first transistor 630 attenuates the positive half of an electrical signal from the voltage source 105 after the voltage level between the first transistor 630 emitter and base exceeds a transistor turn-on voltage. Once the first transistor 630 is turned on, a first attenuation network is created, comprising the first resistor 625 and the resistance (Rce₁) between the emitter and the collector of the first transistor 630. This first attenuation network functions to decrease the positive voltage at the load 125 by allowing current to flow through the first transistor 630. As the voltage level of the analog signal increases, the resistance (Rce₁) between the emitter and collector of the first transistor decreases. As a result, because the resistance (Rce₁) forms a divider network with the first resistor 625, the current flowing through the first transistor increases, thereby limiting the relative voltage across the load 125. Specifically, as the voltage level of the electrical signal increases, the resistance (Rce₁) decreases. Because the first resistor 625 is fixed, a larger percentage of the electrical signal flows through the first transistor 630 and a lesser percentage of the electrical signal flows through the load 125.

The second transistor 635 operates in a manner similar to the first transistor 630 except that it operates on the negative half of the electrical signal from the voltage source 105. Specifically, after the second transistor 635 is turned on, a second attenuation network is created in a manner similar to that described above, comprising the second resistor 650 and the resistance (Rce₂) between the collector and emitter of the second transistor 635. Like the first attenuation network, the second attenuation network adjusts the percentage of the electrical signal flowing through the second transistor 635 depending on the strength of the electrical signal. Thus, the negative half of the analog signal is attenuated, resulting in limiting the relative voltage across the load 125 as the voltage level on the analog signal from the voltage source 105 increases.

The acoustic signal level attenuation circuit 680 effectively attenuates the electrical signal as long as the electrical signal does not put the first transistor 630 and the second transistor 635 into deep saturation modes. Deep saturation occurs when the electrical signal voltage level is sufficiently high to drive the respective collector-emitter resistances (Rce) to their minimum resistance levels. Thus, at deep saturation, the respective collector-emitter resistances (Rce) of the first transistor 630 and the second transistor 635 remain constant as the electrical signal voltage level increases. The attenuation network then operates as a resistor network that allows the voltage across the load 125 to increase. In order to prevent the acoustical signal level clamping circuit 680 from going into deep saturation, an acoustic signal level relay circuit 670, as described below, is coupled between the acoustic signal level attenuation circuit 680 and the voltage source 105.

C. Acoustic Signal Level Relay Circuit

The exemplary acoustic signal level relay circuit 670 of FIG. 6 comprises a third transistor 640 and a fourth transistor 645. The emitter of the third transistor 640 is coupled to the positive side of the voltage source 105, the collector of the fourth transistor 645, the base of the first transistor 630 and the first resistor 625; the base of the third transistor 640 is coupled to the first resistor 625 and the collector of the first transistor 630; and, the collector of the third transistor 640 is coupled to the negative side of the voltage source 105, the emitter of the fourth transistor 645, the emitter of the first transistor 630, and the second resistor 650. The emitter of the fourth transistor 645 is coupled to the negative side of the voltage source 105, the collector of the third transistor 640, the emitter of the first transistor 630, and the second resistor 650; the base of the fourth transistor 645 is coupled to the second resistor 650 and the collector of the second transistor 635; and, the collector of the fourth transistor 645 is coupled to the positive side of voltage source 105, the emitter of the third transistor 640, the base of the first transistor 630, and the first resistor 625.

The acoustic signal level relay circuit 670 is activated when the respective voltage drops across the first resistor 625 and the second resistor 650 are sufficient to turn on the third transistor 640 and the fourth transistor 645. As described above, the voltage drop required to turn on the transistors is generally between 0.5-0.7 volts. Once activated, the acoustic signal level relay circuit 670 applies further attenuation to an electrical signal from the voltage source 105.

The third transistor 640 further attenuates the positive half of the electrical signal from the voltage source 105 after a voltage drop across the first resistor 625 exceeds the transistor turn-on voltage. Once the third transistor 640 is turned on, a third attenuation network is created, comprising the second resistor 625 and the resistance (Rce₃) between the emitter and the collector of the third transistor 640. This third attenuation network functions to decrease the magnitude of the positive voltage at the load 125 by allowing current to flow through the third transistor 630. As the voltage level of the electrical source 105 increases, the resistance (Rce₃) between the emitter and collector of the third transistor 640 decreases. As a result, the current flowing through the third transistor 640 increases, thereby limiting the relative voltage across the load 125. Specifically, as the voltage level of the electrical signal increases, the resistance (Rce₃) decreases. Then, a larger percentage of the electrical signal flows through the third transistor 640 and a lesser percentage of the electrical signal flows through the load 125.

The fourth transistor 645 operates in a manner similar to that of the third transistor 640, except that it operates on the negative half of the electrical signal from the voltage source 105. Specifically, after the fourth transistor 645 is turned on by a sufficient voltage drop across the second resistor 650, a fourth attenuation network is created, comprising the first resistor 625 and the resistance (Rce₄) between the collector and emitter of the fourth transistor 645. Like the third attenuation network, the fourth attenuation network adjusts the attenuation level on the electrical signal, but instead, operates on the negative half of the electrical signal. Thus, the negative half of the electrical signal is attenuated, resulting in limiting the relative voltage across the load 125 as the voltage level on the electrical signal from the voltage source 105 increases.

The exemplary first acoustic signal level relay circuit 670 thus provides an extra layer of protection and raises the voltage level of the voltage source 105 necessary to put the acoustic signal level limiter 680 into a deep saturation mode. In order to protect a user from electrical signals above this level, a fuse 615 is coupled to the voltage source. The fuse 615 is triggered when the voltage level on an electrical signal crosses a particularly large level that might still cause injury to a user in spite of operation of the acoustic signal level limiter 600. However, the protection offered by the acoustic signal level limiter 600 may also be enhanced by providing multiple layers of acoustic signal level relay circuits.

The first acoustic signal level relay circuit 670 offers a number of advantages over currently used varistors. First, as described above, the transistors 640, 645 within the first acoustic signal level relay circuit 670 provide a variable resistance that adjusts as the level on the electrical signal fluctuates. Thus, as the level of the electrical signal becomes greater, a higher percentage of the electrical signal is attenuated. Comparatively, the diodes 115, 120 within the varistor 100 of the prior art have a fixed resistance and the attenuation within the corresponding resistor networks is therefore fixed.

Second, the transistors 640, 645 within the first acoustic signal level relay circuit 670 operate as an automatic attenuation control. The higher the voltage source 105 rises, the higher the resulting attenuation on the electrical signal. As a result, the voltage across the load 125 and the corresponding audio signal are better controlled, and users are not exposed to the injurious effects of very large electrical signal levels transmitted by the voltage source 105.

D. Multiple Integrated Acoustic Signal Level Relay Circuits

FIG. 7 is a circuit diagram of another exemplary embodiment of an acoustic signal level limiter 700, comprising an acoustic signal attenuation circuit 680, a first acoustic signal relay circuit 670, and a second acoustic signal relay circuit 790. The second acoustic signal level relay circuit 790 comprises a fifth transistor 770, a sixth transistor 735, a third resistor 765, and a fourth resistor 745. The emitter of the fifth transistor 770 is coupled between the second resistor 750 and the fourth resistor 745; the base of the fifth transistor 770 is coupled to the collector of the second transistor 635, the collector of the sixth transistor 735 and the fourth resistor 745; and, the collector of the fifth transistor 770 is coupled to the base of the sixth transistor 735, the collector of the first transistor 630, and the third resistor 765. The emitter of the sixth transistor 735 is coupled between the first resistor 720 and the third resistor 765; the base of the sixth transistor 735 is coupled to the collector of the fifth transistor 770, the collector of the first transistor 630 and the third resistor 765; and, the collector of the sixth transistor 735 is coupled to the base of the fifth transistor 770, the collector on the second transistor 635 and the fourth resistor 745.

The second acoustic signal level relay circuit 790 is activated when the respective voltage drops across the third resistor 765 and the fourth resistor 745 are sufficient to turn on the fifth transistor 770 and the sixth transistor 735. As described above, the voltage drop required to turn on the transistors 735, 770 is generally between 0.5-0.7 volts. Once activated, the second acoustic signal level relay circuit 790 applies even greater attenuation to an electrical signal from the voltage source 105.

The second acoustic signal level relay circuit 790 operates similarly to the first acoustic signal level relay circuit 670 to provide further attenuation on the electrical signal from the voltage source 105. Specifically, the fifth transistor 770 further attenuates the negative half of the electrical signal from the voltage source 105 after a voltage drop across the fourth resistor 745 exceeds the transistor turn-on voltage. Once this fifth transistor 770 is turned on, a fifth attenuation network is created, comprising the fourth resistor 745 and the resistance (Rce₅) between the emitter and the collector of the fifth transistor 770. This fifth attenuation network functions to decrease the magnitude of the negative voltage at the load 125 even further by allowing current to flow through the fifth transistor 770. As the voltage level on the electrical source 105 increases, the resistance (Rce₅) between the emitter and collector of the fifth transistor 770 decreases. As a result, because the resistance (Rce₅) forms a divider network with the fourth resistor 745, the current flowing through the fifth transistor 770 increases, thereby limiting the relative voltage across the load 125. Specifically, as the voltage level of the electrical signal increases, the resistance (Rce₃) decreases, and because the fourth resistor 745 is fixed, a larger percentage of the electrical signal flows through the fifth transistor 770 and a lesser percentage of the electrical signal flows through the load 125.

The sixth transistor 735 operates in a manner similar to that of the fifth transistor 770, except that it operates on the positive half of the electrical signal from the voltage source 105. Specifically, after the sixth transistor 735 is turned on by a particular voltage drop across the third resistor 765, a sixth attenuation network is created, comprising the third resistor 765 and the resistance (Rce₆) between the collector and emitter of the sixth transistor 735. Like the fifth attenuation network, the sixth attenuation network adjusts the attenuation level on the electrical signal, but instead, operates on the positive half of the electrical signal. Thus, the positive half of the electrical signal is attenuated, resulting in limiting the relative voltage across the load 125 as the voltage level on the electrical signal from the voltage source 105 increases.

The second acoustic signal relay circuit 790 further increases the voltage level of the voltage source 105 necessary to drive the acoustic signal level attenuation circuit 680 into a deep saturation mode. This increase is due to the further attenuation provided by the second acoustic signal relay circuit 790. Thus, the trigger level on the fuse 615 may be increased because of the heightened protection provided by the acoustic signal level limiter 700 having a second acoustic signal level relay circuit 790.

The acoustic signal level limiter 800 may be further enhanced by adding even more layers of acoustic signal level relay circuits. FIG. 8 shows an example of an acoustic signal level limiter apparatus with N number of acoustic signal level relay circuits. As shown, the acoustic signal level limiter may include a large number of acoustic signal level relay circuits to increase the level of attenuation on the electrical signal from voltage source 105. The acoustic signal level relay circuits are coupled within the acoustic signal level limiter 800 in a manner similar to that described above. For example, third and fourth acoustic signal relay circuits 830 are coupled within the acoustic signal relay circuits in the same manner as the first acoustic signal relay circuit 670 and the second acoustic relay circuit 790. Accordingly, N and N−1 acoustic signal level relay circuits 840 follow the same coupling procedure within the acoustic signal level limiter 800.

The characteristics of these acoustic signal relay circuits may be modified by adjusting the resistance levels of the resistors operating within the attenuation networks. Also, different types of transistors (e.g., bipolar junction transistors (BJTs) and field-effect transistors (FETs)) may be implemented within the design to adjust turn-on levels and pinch-off voltages. For example, junction field-effect transistors (JFETs) may be used to adjust the level of attenuation and turn-on voltages provided by transistors within an attenuation network. Specifically, the pinch-off voltages on JFETs may be adjusted to change the maximum voltage level threshold across the load 125.

A finite number of relay circuits in a given application means that a current level can be reached that will result in limiter failure modes. It is necessary to insure that any failure mode is prevented from delivering unsafe voltage output to the load. It is essential that signals are not passed to the load if the limiter function is not operational. The invention provides two methods to achieve ultimate failsafe operation. These are series fusing and shunt shorting of the signal with relation to the load.

Firstly, proper series fusing will insure that the load is disconnected before the limiter circuit establishes a failure mode. When the limiter circuit conducts large current over a short amount of the time, the lowest thermal mass item in the circuit experiences the most energy. For example, in a typical IC package, 1 mil diameter gold bond wires fuse open or melt. These wires connect the package pins to the ASIC die bonding pads so when these input wires fuse, the headset earphone signal path is opened.

Secondly, a process called a “Zener Zap” can be incorporated in a manner that provides short-circuiting of the output at a desired high energy level. The “Zener Zap” occurs when sufficiently high power is produced across semiconductor diode junctions in either a forward or a reverse direction. The semiconductor diode junction will break down if this power level is sustained for a sufficient period of time and the junction will be finally breached. Specifically, the conducting semiconductor may be heated by this power level to in excess of 200 degrees Celsius. The on-chip interconnect metal which contacts these junctions is also heated until the metal liquefies and the metal atoms are drawn through the semiconductor junction. This process may occur very quickly because the metal atoms create a metal bridge or short at the junction.

The resistance of this short depends on various factors, including the amount of metal atoms at the semiconductor junction and the amount of time the energy remains above the thermal melting point in the junction prior to breach. The short is permanent and its resistance level may vary from a few ohms up to approximately 25 ohms, much less than the impedance of the acoustic signal level limiter and load. Thus, in one exemplary embodiment of the acoustic signal level limiter, the corners of the transistor layout base and emitter contacts can be optimized for both current crowding in order to force localized contact heating and to provide a large source of contact metal to precipitate a low ohmic short.

As will be understood by those familiar with the art, the invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. For example, the particular division of functionality between the various modules, circuits, or components may differ from that described herein, given the variety of software hardware platforms that may be used to practice the invention. For example, the hardware implementations include custom ASICs, discrete logic, FPGAs, PLAs, or DSP with appropriate software programming. Finally the particular naming of the circuit elements is not mandatory or significant, and the mechanisms that implement the invention or its features may have different names or formats. Accordingly, the disclosure of the present invention is intended to be illustrative, but not limiting, of the scope of the invention, which is set forth in the following claims. 

1. A signal level limiting apparatus for delivering an electrical signal from an electrical source to a load, comprising: a signal level attenuation circuit adapted to receive the electrical signal and activate a first attenuation network to attenuate the electrical signal in response to a signal level of the electrical signal crossing a first threshold; wherein attenuating the electrical signal reduces the rate at which the signal level of the electrical signal increases at the load in relation to the signal level of the electrical signal at the electrical source and, a first signal level relay circuit coupled to receive the electrical signal and operative to activate a second attenuation network to further attenuate the electrical signal in response to the signal level of the electrical signal crossing a second threshold, and wherein the first acoustic signal relay circuit is further operative to increase a level of the electrical signal necessary to drive the signal level attenuation circuit into a deep saturation mode.
 2. The apparatus of claim 1, further comprising a fuse operative to receive the electrical signal and to isolate the electrical signal from a load in response to the level of the electrical signal exceeding a hazardous threshold.
 3. The apparatus of claim 1, further comprising a fusing element disposed within an integrated metallic path that is operative to isolate the electrical signal from a load by breaching the integrated metallic path in response to the level of the electrical signal exceeding a hazardous threshold.
 4. The apparatus of claim 1, further comprising an integrated shunting element disposed within an integrated metallic path that is operative to isolate the electrical signal from a load by creating a short across a semiconductor pn junction in response to the level of the electrical signal exceeding a hazardous threshold.
 5. The apparatus of claim 1, further comprising a second signal level relay circuit adapted to receive the electrical signal and operative to activate a third attenuation network to further attenuate the electrical signal in response to the level of the electrical signal crossing a third threshold.
 6. The apparatus of claim 5, wherein the second threshold and the third threshold are equal.
 7. The apparatus of claim 5, wherein the second signal level relay circuit comprises a switch adapted to receive the electrical signal and operative to activate the third attenuation network in response to the level of the electrical signal crossing the third threshold.
 8. The apparatus of claim 7, wherein the third attenuation network comprises: a first transistor coupled to a first resistor and having a resistance (Rce₁) between its collector and emitter nodes; and, a second transistor coupled to a second resistor and having a resistance (Rce₂) between its collector and emitter nodes.
 9. The apparatus of claim 7, wherein the switch comprises: a first transistor adapted to receive the electrical signal and operative to detect a voltage on a positive half of the electrical signal; and, a second transistor adapted to receive the electrical signal and operative to detect a voltage on a negative half of the electrical signal.
 10. The apparatus of claim 9, wherein the first transistor emitter is coupled to the second transistor collector and the positive side of the voltage source, and the first transistor collector is coupled to the second transistor emitter.
 11. A communications headset, comprising: a communications interface that connects the communications headset to a communications device; a signal level limiter adapted to receive an electrical signal from the communications interface and operative to activate a plurality of attenuation devices that attenuate the electrical signal so as to establish a maximum threshold level that the electrical signal level may not exceed, wherein at least one of the attenuation devices is further operative to increase a level of the electrical signal necessary to drive the signal level limiter into a deep saturation mode; and, a speaker, coupled to receive and convert the attenuated acoustic signal to an audible signal; and wherein attenuating the electrical signal comprises reducing the rate at which the signal level of the electrical signal increases at the speaker in relation to the signal level of the electrical signal received at the communications interface.
 12. The communications headset of claim 11, further comprising a fuse coupled to the speaker and operative to isolate the load from the electrical signal in response to the level of the electrical signal exceeding a hazardous level.
 13. The communications headset of claim 11, further comprising a fusing element disposed within an integrated metallic path and operative to isolate the speaker from the electrical signal by breaching the integrated metallic path in response to the level of the electrical signal exceeding a hazardous level.
 14. The communications headset of claim 11, further comprising a shunting element disposed within an integrated metallic path and operative to isolate the electrical signal from a speaker by creating a short across a semiconductor pn junction in response to the level of the electrical signal exceeding a hazardous threshold.
 15. A method for limiting the level of an electrical signal, the method comprising: clamping the level of the electrical signal in response to the level of the electrical signal exceeding a first threshold; and, activating a first signal level attenuation circuit that further attenuates the electrical signal in response to the level of the electrical signal exceeding a second threshold; and, reducing the level of the signal level to zero after the level of the signal exceeds a third threshold greater than the first and second thresholds.
 16. The method of claim 15, wherein the first threshold and the second threshold are equal.
 17. The method of claim 15, further comprising converting the attenuated electrical signal to an audible signal.
 18. The method of claim 15, wherein a first attenuation network is used to clamp the level of the electrical signal.
 19. The method of claim 15, wherein the first signal level attenuation circuit includes a second attenuation network that is operative to attenuate the electrical signal in response to the level of the electrical signal crossing the second threshold.
 20. The method of claim 17, further comprising activating a second signal level attenuation circuit that is operative to further attenuate the electrical signal in response to the level of the electrical signal crossing a third threshold.
 21. The method of claim 20, wherein the second threshold and the third threshold are equal.
 22. The method of claim 20, wherein the second signal level attenuation circuit includes a third attenuation network that is operative to even further attenuate the electrical signal in response to the level of the electrical signal crossing the third threshold.
 23. The method of claim 15, further comprising triggering a fuse that isolates the electrical signal from a load in response to the level of the electrical signal exceeding a hazardous level.
 24. The method of claim 15, further comprising activating a fuse integrated within a metallic path so as to isolate the electrical signal from a load by breaching the integrated metallic path in response to the level of the electrical signal exceeding a hazardous threshold.
 25. The method of claim 15, further comprising activating a shunting element integrated within a metallic path so as to isolate the electrical signal from a load by creating a short across a semiconductor pn junction in response to the level of the electrical signal exceeding a hazardous threshold. 